EX-300 Shallow Probe

EX-300在半导体行业的LEXES技术方面拥有十多年的丰富经验：全球十大半导体制造厂已安装了数十台LEXFAB-300 Shallow Probe。EX-300专为硅锗（SiGe）和高介电金属闸极（HKMG）等具有挑战性的新应用而设计，旨在缩短高级逻辑和存储设备的上市时间，同时实现高产量。

32纳米节点及以上的前端工艺问题的首选工具
基于非接触式、非破坏性LEXES技术——表面和近表面化学组分直接测量的独特解决方案——EX-300提供了一系列配套功能，将经典计量领域扩展到当前具有挑战性的工艺：

• 超浅注入物：监测低能量、高浓度的注入物
• 应变硅工艺控制：B:SiGe和P:SiC等外延层中的化学组分和厚度，对层组分没有限制
• HKMG计量：氧化物和金属均由单个EX-300平台进行控制

CAMECA推出的EX-300不仅增强了长期稳定性，也具有极佳的真空限制。下图显示了在平均砷剂量为1.97e15 at/cm2、总体RSD（1σ）为0.622％的条件下数个月内的再现性。

高级和强大的模式分析
EX-300专门设计用于对具有挑战性的图案化晶圆（小至30x30微米的pad）进行计量。
新的LaB6电子枪可提供更高的亮度，从而确保可使用更密集的小探针。经改良的光源和光学器件以及具有变焦能力的新型数码相机可实现流畅的视觉导览，而新型静电卡盘则可确保晶圆夹取。

优化的设计和简单的工具控制旨在延长正常运行时间
对比之前的Shallow Probe LEXFAB-300型号，EX-300可增加5%至20%的通量（视应用而定）。经改良的人体工程学设计可实现快速维护并缩短平均修复时间（MTTR）。完全集成的LEXES-Pilot软件提供了用户友好的界面以及可靠的工厂自动化系统。

Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011

Implantation and metrology solutions for low energy boron implant on 450mm wafers. A-S. Robbes, , K-A B-T. Meura, M-P. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940018

Comparison of Different Characterization Techniques for Plasma Implanted Samples having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations. F. Torregrosa, C. Grosjean, N. Morel, M.P. Moret, M. Schuhmacher, Y. Depuydt, Y. Spiegel, H. Etienne, S.B. Felch, J. Duchaine, L. Roux, B. Bortolotti, R.Daineche, 18th International Conference on Ion Implantation Technology IIT 2010. AIP Conference Proceedings, Volume 1321, pp. 161-166 (2011)

Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Loibl, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), Feb 2010

Addressing the challenges in elemental composition, thickness determination, and dopant dosimetry from FE to BE. Mona P. Moret, Chrystel Hombourger, Francois Desse, Rabah Benbalagh, Valerie Paret, Michel Schuhmacher, Semiconductor Fabtech, 37th edition, Volume 2, June 2008

The low energy X-ray Spectrometry technique as applied to semiconductors. Pierre-Francois Staub, Microscopy and Microanalysis, 12, 1-7, 2006

Dopant dose metrology for ultra-shallow implanted wafers using electron-induced X-ray spectrometry at pattern-size scale. P.F. Staub, R. Benbalagh, F. Desse, C. Hombourger, M. Schuhmacher. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

In-line quantitative dose metrology of ultra thin gate oxides. Y. Jee et al. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

Quantitative determination of dopant dose in ultra-shallow implants using the LEXES technique. P.F. Staub, C. Hombourger, M. Schuhmacher, J. Vac. Sci. Technol. B, January 2001

LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures. C. Hombourger, P.F. Staub, M. Schuhmacher, F. Desse, E. de Chambost, C. Hitzman, Proceedings of SIMS XIII, Nara, Japan, November 2001