EX-300 Shallow Probe

适用于22纳米及以上节点的前端半导体组分计量解决方案
CAMECA推出的EX-300是一款基于LEXES的独特测量工具,支持自90纳米节点时代以来的主要半导体开发,并跟进最多元化材料的整合。它缩短了逻辑和存储设备的上市时间,并提高了大批量生产的综合产量。
  • 产品概述 +


    EX-300在半导体行业的LEXES技术方面拥有十多年的丰富经验:全球十大半导体制造厂已安装了数十台LEXFAB-300 Shallow Probe。EX-300专为硅锗(SiGe)和高介电金属闸极(HKMG)等具有挑战性的新应用而设计,旨在缩短高级逻辑和存储设备的上市时间,同时实现高产量。

    32纳米节点及以上的前端工艺问题的首选工具
    基于非接触式、非破坏性LEXES技术——表面和近表面化学组分直接测量的独特解决方案——EX-300提供了一系列配套功能,将经典计量领域扩展到当前具有挑战性的工艺:
    • 超浅注入物:监测低能量、高浓度的注入物
    • 应变硅工艺控制:B:SiGe和P:SiC等外延层中的化学组分和厚度,对层组分没有限制
    • HKMG计量:氧化物和金属均由单个EX-300平台进行控制

    CAMECA推出的EX-300不仅增强了长期稳定性,也具有极佳的真空限制。下图显示了在平均砷剂量为1.97e15 at/cm2、总体RSD(1σ)为0.622%的条件下数个月内的再现性。

    高级和强大的模式分析
    EX-300专门设计用于对具有挑战性的图案化晶圆(小至30x30微米的pad)进行计量。
    新的LaB6电子枪可提供更高的亮度,从而确保可使用更密集的小探针。经改良的光源和光学器件以及具有变焦能力的新型数码相机可实现流畅的视觉导览,而新型静电卡盘则可确保晶圆夹取。

    优化的设计和简单的工具控制旨在延长正常运行时间
    对比之前的Shallow Probe LEXFAB-300型号,EX-300可增加5%至20%的通量(视应用而定)。经改良的人体工程学设计可实现快速维护并缩短平均修复时间(MTTR)。完全集成的LEXES-Pilot软件提供了用户友好的界面以及可靠的工厂自动化系统。
    LEXES-implant-dosimetry

  • 看看EX-300能够做什么 +

    • 3D FinFET metrology with EX-300 LEXES Shallow Probe
      3D FinFET计量(LEXES)

      EX-300 Shallow Probe具备检测新型三维结构设备中的组分变化的独特能力,例如N沟道场效应晶体管(n-FET)中的P/A以及P沟道场效应晶体管(p-FET)中的Ge/B……

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  • 科学出版物 +


    A selection of publications on LEXES and Shallow Probe
    Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX. Kim-Anh Bui-Thi Meura, Frank Torregrosa, Anne-Sophie Robbes, Seoyoun Choi, Alexandre Merkulov, Mona P. Moret, Julian Duchaine, Naoto Horiguchi, Letian Li, Christoph Mitterbauer. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940011

    Implantation and metrology solutions for low energy boron implant on 450mm wafers. A-S. Robbes, , K-A B-T. Meura, M-P. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon. 20th International Conference on Ion Implantation Technology (IIT), 2014. DOI: 10.1109/IIT.2014.6940018

    Comparison of Different Characterization Techniques for Plasma Implanted Samples having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations.
    F. Torregrosa, C. Grosjean, N. Morel, M.P. Moret, M. Schuhmacher, Y. Depuydt, Y. Spiegel, H. Etienne, S.B. Felch, J. Duchaine, L. Roux, B. Bortolotti, R.Daineche, 18th International Conference on Ion Implantation Technology IIT 2010. AIP Conference Proceedings, Volume 1321, pp. 161-166 (2011)

    Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Loibl, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), Feb 2010

    Addressing the challenges in elemental composition, thickness determination, and dopant dosimetry from FE to BE. Mona P. Moret, Chrystel Hombourger, Francois Desse, Rabah Benbalagh, Valerie Paret, Michel Schuhmacher, Semiconductor Fabtech, 37th edition, Volume 2, June 2008

    The low energy X-ray Spectrometry technique as applied to semiconductors. Pierre-Francois Staub, Microscopy and Microanalysis, 12, 1-7, 2006

    Dopant dose metrology for ultra-shallow implanted wafers using electron-induced X-ray spectrometry at pattern-size scale.
    P.F. Staub, R. Benbalagh, F. Desse, C. Hombourger, M. Schuhmacher. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    In-line quantitative dose metrology of ultra thin gate oxides.
    Y. Jee et al. Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology, University of Texas at Dallas, March 2005

    Quantitative determination of dopant dose in ultra-shallow implants using the LEXES technique. P.F. Staub, C. Hombourger, M. Schuhmacher, J. Vac. Sci. Technol. B, January 2001

    LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures.
    C. Hombourger, P.F. Staub, M. Schuhmacher, F. Desse, E. de Chambost, C. Hitzman, Proceedings of SIMS XIII, Nara, Japan, November 2001