Seoyoun (Joan) Choi, application engineer for SIMS (CAMECA, France) presents applications of the “raster change” dynamic SIMS method for measuring the carbon concentration in silicon samples.
Information on hydrogen, carbon and oxygen impurities (atmospheric gas elements) introduced during processing and/or aging is of major importance to better understand the lifetime and failure modes of semiconductor devices.
Dynamic SIMS plays an important role in evaluating the concentration of impurities (H, C, O) in semiconductor materials because of its high sensitivity, ability for depth profiling at high throughput, and good detection limits. Dynamic SIMS imaging capabilities can also be used to investigate local non-uniformity of light elements at sub-micrometer scale. Based on a magnetic sector mass spectrometer, the CAMECA IMS 7f-Auto is a versatile magnetic sector SIMS that offers unequalled depth profiling performance.
For bulk analysis, the “raster change” method is a powerful analytical method to obtain the bulk concentration of light elements. This method, based on the signals intensity variation when reducing the raster, allows to separate the net content in the sample from the instrumental background contribution, and thus provides the bulk impurity concentration.
About the presenter
Seoyoun (Joan) Choi graduated in Physics and Materials Engineering at the Chungnam National University, Korea in 1998. She then worked at the analysis service laboratory using CAMECA IMS 4f during several years. Joan joined CAMECA Korea in 2004 as application engineer for Shallow Probe (Fab based EPMA tool), before moving to CAMECA Headquarters in France in 2008 as an application engineer for SIMS. She has recently been appointed Expert Application Engineer for the SIMS product lines. During her career, Joan has performed numerous demonstration analyses on customer samples, contributed to the development of new applications and provided advanced training to academic and industrial customers worldwide.