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SIMS 4550 四极杆二次离子质谱仪

半导体中的四极杆SIMS掺杂物深度剖析和薄层分析
CAMECA SIMS 4550为光学器件中的硅、高k、硅锗以及III-V族化合物等复合材料的薄层提供超浅深度剖析、痕量元素和组分测量等一系列扩展功能。
  • 产品概述 +


    高深度分辨率和高通量
    随着器件尺寸不断缩小,当今半导体的注入物剖面和层厚度通常在1-10纳米的范围内。SIMS 4550通过提供碰撞能量可从5keV降至低于150eV的氧和铯高密度一次离子束进行优化,充分满足上述应用领域的需求。

    灵活性
    CAMECA的SIMS 4550是一款动态SIMS工具,可在溅射条件(碰撞角度、能量、物种)方面提供全面的灵活性。在样品溅射过程中,通过电荷补偿(电子枪、激光)专用选项可以轻松分析绝缘材料。SIMS 4550可测量层厚度、对准度、陡度、完整性、均匀性和化学计量。样品架可容纳多种样品:几毫米的薄片至直径100毫米的样品。

    高精度和自动化
    先进的四极杆分析仪的光路、峰噪比等都是降低痕量元素检出限的关键因素。凭借先进的特高真空设计以及低至E-10mbar(E-8Pa)范围内的主室压力,SIMS 4550可为氢、碳、氮和氧提供出色的灵敏度。超稳定的离子源和电子设备确保达到精度以及RSD小于0.2%的测量重复性。
    通过易于使用的软件、预定义方案、远程操作以及故障排除,充分考虑了人为因素对精度的影响。每次测量的所有仪器参数设置都存储在数据库中。因此重复测量只需点击几下鼠标即可完成。其他自动化功能

  • 相关网络研讨会 +

    • Monitoring of Rapid Thermal Anneal (RTA) with SIMS

      星期二, 十二月 10, 2024

      This webinar presented by Jack Jiang, Principal Engineer at NXP Semiconductors, is only available on demand. Please fill in the contact form under CONTACT -> CONTACT US to request the link.
      Click here to view
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  • 科研文章 +


    以下是部分 SIMS 4550 用户发表的研究文章
    欢迎您将缺失的参考文献、PDF 文件和补充资料发送给我们!
    请发送电子邮件至 cameca.info@ametek.com

    Monitoring of rapid thermal anneal with secondary ion mass spectrometry.
    Z. X. Jiang, A. Ravi, T. Breeden, K. Khmelnitskiy, A. Duncan, D. Huynh, S. Butler, B. Granados, D. Acker, J. Luebbe, D. Sieloff, S. Bolton, and G. Prieto. J. Vac. Sci. Technol. B 42, 034007 (2024)
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    Automation, Electronics, Electrical Engineering and Space Technologies. R Bogdanowicz. Doctoral defense (2024)
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    Surface passivation in c-Si solar cells via a double-barrier quantum-well structure for ameliorated performance. Muhammad Quddamah Khokhar, Jaeun Kim, Ziyang Cui, Sungjin Jeong, Sungheon Kim, Rajiv Kumar Pandey, Eun-Chel Cho, Junsin Yi. Applied Surface Science 607 (2023) 155082
    Read the full article

    Front-side and back-side secondary ion mass spectrometry analyses on advanced doping processes for ultra-large scale integrated circuit: A case study. Shu Qin. Thin Solid Films Volume 766, 1 February 2023, 139654
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    Double-Barrier Quantum-Well Structure: An Innovative Universal Approach for Passivation Contact for Heterojunction Solar Cells. Muhammad Quddamah Khokhar, Hasnain Yousuf, Shahzada Qamar Hussain, Youngkuk Kim,Rajiv Kumar Pandey, Eun-Chel Cho, and Junsin Yi. Applied Energy Materials (2023)
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    Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning. Ying Rui, Meng-Hsien Chen, Sumeet Pandey, et al. J. Vac. Sci. Technol. A 41, 022601 (2023)
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    Advanced Optical Spectroscopy Techniques for Semiconductors. Masanobu Yoshikawa. Springer, Cham. (2023)
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    Design of mechanically advantaged glasses with hydration-induced stress profiles. Timothy M. Gross, Jingshi Wu. International Journal of Applied Glass Science (2023) 
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    Impact of B2H6 plasma treatment on contact resistivity in silicon heterojunction solar cells. Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Aki Tanaka, Yoshiko Iseki, Kyotaro Nakamura, Kazuo Muramatsu, Yasuyoshi Kurokawa, Yoshio Ohshita and Noritaka Usami. Kazuhiro Gotoh et al. Jpn. J. Appl. Phys. 62 SK1026 (2023)
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    Simultaneous measurement of impurities and composition by secondary ion mass spectrometry with optical emission spectrometry. Takashi Miyamoto, Shigenori Numao, Junichiro Sameshima & Masanobu Yoshikawa. Surface and Interface Analysis. (2023); 1–6.
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    Formation of Al3Sc in Al0.8Sc0.2 thin films. Giovanni Esteves, Joseph Bischoff, Ethan W.S. Schmidt, Mark A. Rodriguez, Samantha G. Rosenberg, Paul G. Kotula. Vacuum. Volume 200, June 2022, 111024 
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    Boron Delta-Doping in Hydrogenated Amorphous Silicon for High-Performance Silicon Heterojunction Solar Cells. Gotoh, Kazuhiro and Ozaki, Ryo and Morimura, Motoo and Tanaka, Aki and Iseki, Yoshiko and Nakamura, Kyotaro and Muramatsu, Kazuo and Kurokawa, Yasuyoshi and Ohshita, Yoshio and Usami, Noritaka. SSRN. SOLMAT-D-22-00208 (2022) 
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    A CVD diamond reactor for controlled thin film growth with sharp layer interfaces. Philip Schätzle, Philipp Reinke, David Herrling, Arne Götze, Lukas Lindner, Jan Jeske, Lutz Kirste, and Peter Knittel
    Phys. Status Solidi A 2022, 2200351.
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    Imaging and hydrogen analysis by SIMS in zirconium alloy cladding: a dual ion beam approach. N.Mine, S.Portier and M.Martin. Surface and Interface Analysis. Volume 46, Issue S1, pages 249–252, November 2014

    Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010

    Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs.
    C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008

    SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004

    Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114

    Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4

    Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile.
    M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)