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IMS Wf和SC Ultra 低能量二次离子质谱仪

适用于高级半导体应用的高性能低能量SIMS
IMS Wf和SC Ultra经专门设计，可充分满足高级半导体对动态SIMS测量日益增长的需求该仪器可提供大范围的冲击能量（100 eV到10 keV），不影响质量分辨率和一次离子束密度，可确保在高通量条件下为具有挑战性的应用提供非常高的分析性能：超浅能量和高能量注入物、超薄氮氧化物、高k金属栅极、硅锗掺杂层，Si:C:P结构、PV和LED器件及石墨烯等等。

  • 产品概述 +


    从标准到超浅深度剖析
    对高级半导体进行分析的首要条件是优化SIMS分析条件以进行超浅深度剖析，而无需舍弃标准深度剖析应用。CAMECA因此开发了独特的SIMS仪器设计，能够溅射具有大范围碰撞能量的样品：从用于厚结构的高能量（keV范围）到用于超薄结构的超低能量（≤150eV）。这种碰撞能量选择的灵活性适用于不同的控制良好的溅射条件（物种、入射角等）。

    CAMECAIMS Wf和SC Ultra是一款提供此类极限低碰撞能量（EXLIE）功能的SIMS仪器，且在高质量分辨率和高透过率方面毫不逊色。

    高自动化水平
     随着SIMS技术的成熟，用户希望能够降低实现高再现性和高精度测量所需的专业知识要求。未来发展趋势显然是无人值守的自动分析。CAMECA IMS Wf和SC Ultra利用计算机自动化应对该挑战，确保完全控制所有分析参数（分析方案、仪器设置等）。

    气锁系统、样品台和分析室已进行了优化，最多可容纳300毫米的晶圆（IMS Wf型号），并可在一批次中装载大量样品——在IMS Wf型号中最多可装载100个样品，同时还提供气锁和分析室之间的完全电动化转移。

    凭借高自动化水平，IMS Wf和SC Ultra可执行快速深度剖析，具有优化的样品通量和出色的测量稳定性，确保了前所未有的SIMS工具生产率。

  • 查看网络研讨会 +

    • Secondary Ion Mass Spectrometry Measurements with a Large Scale-to-Resolution Ratio

      星期四, 十一月 28, 2024

      This webinar presented by Paweł Michałowski from Łukasiewicz - IMiF, is only available on demand. Please fill in the contact form under CONTACT -> CONTACT US to request the link.
      Click here to view
    • Dynamic SIMS for Semiconductors

      星期四, 九月 16, 2021

      A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Poland
      ↓ Duration : 20 minutes
      Click here to view
    • Secondary Ion Mass Spectrometry Characterization of MAX and MXene Samples

      星期二, 十二月 13, 2022

      Learn with Dr. Paweł P. Michałowski why novel ultrathin 2D materials are so attractive for applications ranging from energy storage to electronics and medicine, how compositional variability and the interaction of surface termination layers affect fine-tuning of MAX and MAXenes properties and how ultra-low energy Secondary Ion Mass Spectrometry can facilitate further development of MAX and MXenes.
      ↓ Duration: 48 minutes
      Click here to view

  • 看看IMS Wf和SC Ultra能够做什么 +

  • 文档 +

  • 科研文章 +


    以下是由部分IMS Wf和SC Ultra用户发表的科研文章

    您还可以下载我们的PDF 电子表格，表格内汇编了所有使用 IMS Wf 和 SC Ultra 数据的科研文章。
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    欢迎您向我们发送任何缺失的参考文献、PDF 文件和补充资料！ 
    请发送电子邮件至 cameca.info@ametek.com

    Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing. S. Kerdil`es, M. Opprecht, D. Bosch, M. Ribotta, B. Skl´enard, L. Brunet, P.P. Michalowski. Materials Science in Semiconductor Processing Volume 186, February (2025), 109043.
    Read the full article

    Ultralow impact energy dynamic secondary ion mass spectrometry with nonfully oxidizing surface conditions. A. Merkulov. J. Vac. Sci. Technol. B 42, 064005 (2025)

    Fabrication and Characterization of Boron‑Implanted Silicon Superconducting Thin Films on SOI Substrates for Low‑Temperature Detectors. A. Aliane · L. Dussopt · S. Kerdilès · H. Kaya · P. Acosta‑Alba · N. Bernier ·A.‑M. Papon · E. Martinez · M. Veillerot · F. Lefloch. Journal of Low Temperature Physics (2024)
    Read the full article

    MXenes with ordered triatomic-layer borate polyanion terminations. Dongqi Li, Wenhao Zheng, Sai Manoj Gali, Kamil Sobczak, Michal Horák, Josef Polčá, Nikolaj Lopatik, Zichao Li, Jiaxu Zhang, Davood Sabaghi, Shengqiang Zhou, Paweł P. Michałowski, Ehrenfried Zschech, Eike Brunner, Mikołaj Donten, Tomáš Šikola, Mischa Bonn, Hai I. Wang, David Beljonne, Minghao Yu, Xinliang Feng. ChemRxiv (2024)
    Read the full article

    Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN. Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, and Ewa Grzanka. Sci Rep. (2024); 14: 14272
    Read the full article

    Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device. Marivone Gusatti, Daniel Aragão Ribeiro de Souza, Mario Barozzi, Rossana Dell’Anna, Elena Missale, Lia Vanzetti, Massimo Bersani, and Marcelo Nalin. ACS Appl. Mater. Interfaces (2024)
    Read the full article

    Advanced SiGe: B Raised Sources and Drains for p-type FD-SOI MOSFETs. Jean-Michel Hartmann, Francois Aussenac, Olivier Glorieux, David Cooper, Sebastien Kerdilès, Zdenek Chalupa, Francois Boulard, Heimanu Niebojewski, Blandine Duriez, Thomas Bordignon, Sebastien Peru, Pawel Michałowski, Richard Daubriac, Fuccio Cristiano. ECS Transactions 114(2),185 (2024)
    Read the full article

    Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires. Paweł Piotr Michałowski, Jonas Müller, Chiara Rossi, Alexander Burenkov, Eberhard Bär, Guilhem Larrieu, Peter Pichler. Measurement 211, 112630 (2023)
    Read the full article
     
    Oxycarbide MXenes and MAX phases identification using monoatomic layer-by-layer analysis with ultralow-energy secondary-ion mass spectrometry. Paweł Piotr Michałowski, Mark Anayee, Tyler S Mathis, Sylwia Kozdra, Adrianna Wójcik, Kanit Hantanasirisakul, Iwona Jóźwik, Anna Piątkowska, Małgorzata Możdżonek, Agnieszka Malinowska, Ryszard Diduszko, Edyta Wierzbicka, Yury Gogotsi. Nature Nanotechnology 17, 1192-1197 (2022)
    Read the full article

    Titanium pre-sputtering for an enhanced secondary ion mass spectrometry analysis of atmospheric gas elements. Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 35, 1047 (2020).
    Read the full article

    Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks. Sebastian Złotnik, Jakub Sitek, Krzysztof Rosiński, Paweł Piotr Michałowski, Jarosław Gaca, Marek Wójcik, Mariusz Rudziński. Applied Surface Science 488, 688-695 (2019).
    Read the full article

    Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers. D. Colombara, F. Werner, T. Schwarz, I. Cañero Infante, Y. Fleming, N. Valle, C. Spindler, E. Vacchieri, G. Rey, M. Guennou, M. Bouttemy, A. Garzón Manjón, I. Peral Alonso, M. Melchiorre, B. El Adib, B. Gault, D. Raabe, Phillip J. Dale & S. Siebentritt. Nature Communications volume 9, Article number: 826 (2018).
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    Reproducibility of implanted dosage measurement with CAMECA Wf. Kian Kok Ong, Yun Wang and Zhiqiang Mo. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
    Read the full article

    Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016).
    Read the full article

    SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016).
    Read the full article

    Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications.     M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.
     
    Influence of Temperature on Oxidation Mechanisms of Fiber-Textured AlTiTaN Coatings. V. Khetan, N. Valle, D. Duday, C. Michotte, M-P Delplancke-Ogletree, and P. Choquet. ACS Appl. Mater. Interfaces (2014), 6, 6, 4115–4125.
    Read the full article

    Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry. P. Philipp, Quyen K. Ngo, M. Shtein, J. Kieffer, and T. Wirtz. Anal. Chem. 2013, 85, 1, 381–388.
    Read the full article

    Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs.     M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

    Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants.     A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588 

    Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

    Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

    Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

    Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953

  • 我们的一些用户 +

    以下是 IMS Wf 和 SC Ultra 的一小部分用户。大部分半导体行业的用户希望保密，故此处不予列出。

    Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland
    The research team under leadership of Pawel Piotr Michalowski at Łukasiewicz - Institute of Microelectronics and Photonics uses an SC Ultra to analyze ultra-thin and 2D materials as well as full device structures. Numerous publications have been released on a wide spectrum of topics ranging from  graphene and quantum cascade layers to  solid polymer electronics for energy storage. Dr Michałowski also worked on analyzing doping uniformity in semiconductor materials like p-type InAs grown on GaAs. Using the CAMECA SC Ultra, he achieved depth resolution below 1 nm, which is critical for understanding the distribution of dopants in semiconductor layers.

    ITC-irst (Fondazione Bruno Kessler), divisione FSC, Italy
    The FSC division led by Mariano Anderle develops and applies new surface analytical methodologies on last generation microelectronic devices and materials. It is involved in long term collaborations with several leading microelectronics companies. Masterpiece of the Materials and Analysis for Micro-Electronics lab under the direction of Massimo Bersani is a CAMECA IMS SC Ultra.

    CNT, Fraunhofer-Center Nanoelektronische Technologien, Dresden, Germany
    This public-private partnership between the Fraunhofer Gesellschaft and leading semiconductor manufacturers aims at developing new process technologies for nanoelectronics. It is equiped with state-of the-art instruments for materials charactrization, among which a CAMECA IMS Wf.

    Science and Analysis of Materials (SAM), Luxemburg
    A departement of Gabriel Lippmann public research center, SAM started its activities in 1992. Both a fundamental and applied research facility as well as an analytical service laboratory, it provides assistance to more than 100 industrial and academic partners worldwide. It is equipped with a CAMECA SC Ultra and a NanoSIMS 50.

  • 软件 +

    • SmartPRO

      适用于 CAMECA IMS 7f-Auto、IMS Wf 和 SC 超二次离子质谱仪的全新 SmartPRO 软件包将 Chain Analysis 和 WinCurve 结合在一个无缝集成的环境中，并添加了实时数据处理和自动化功能，从而提高了易用性、生产率和数据质量。

      继续阅读

    • WinCurve dataprocessing sofware
      WinCurve

      WinCurve专为CAMECA SIMS仪器而开发，可在用户友好的环境中提供强大的数据处理和可视化功能。

      继续阅读

    • WinImage Software
      WinImage II

      WinImage II专为CAMECA SIMS仪器而开发，可在PC-Windows™环境中提供强大的数据处理和可视化功能。

      继续阅读

  • 升级套件 +

    自动化＆软件 - 来源 - Airlock - Specimen Chamber
    自动化＆软件

    PC-Automation（Wf / SCU）
    PC-Automation系统取代SUN系统，可实现全自动化和自动化。无人值守操作，大大提高了易用性。
    请注意，下面列出的大多数升级套件只能安装在IMS Wf＆nbsp;和配备PC-Automation的SC Ultra仪器。

    后处理 （Wf / SCU）
    用于离线数据处理的PC站（不包括CAMECA软件）。

    桌面控制复制 （Wf / SCU）
    额外的PC，键盘，CAMECA键盘，屏幕......确保在实验室分为两部分时优化操作舒适性。

    WinCurve软件（Wf / SCU）
    提供强大的SIMS数据处理功能。图形功能以及简单的报告创建功能。

    WinImage软件（Wf / SCU）
    提供强大的SIMS图像处理功能，提供标准版或扩展版。

    远程监控 （Wf / SCU）
    实时显示软件许可证，提供对所有仪器参数的远程访问，从而允许操作员从他/她自己的PC远程调谐和运行仪器。

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    来源

    低能量铯离子源 （Wf / SCU ）
    凭借这种新型高亮度铯离子源，IMS Wf / SCU现在可以执行极低冲击深度剖析并分析具有纳米深度分辨率的超薄层。

    高亮度射频等离子氧离子源 （Wf / SCU）
    与传统的DUO-plasmatron相比，RF等离子体源可以使用超低能量O2主光束实现显着的性能提升。

    标本室

    电动Z-运动阶段 （Wf / SCU ）
    取代压电舞台运动

    Turbo Detection （Wf / SCU）
    涡轮分子泵取代现有的离子泵。改善检测系统的真空度。

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