Phosphorus-doped polysilicon (poly-Si)/SiOx passivating contacts can dramatically reduce carrier recombination at the interface between metal contacts and silicon, achieving an excellent surface passivation, thus allowing high solar cell efficiencies. It has been widely reported that the in-diffusion of hydrogen in the poly-Si passivating contacts can further improve the passivation quality. Secondary Ion Mass Spectrometry is used to investigate the correlation between the hydrogen amount in the poly-Si/SiOx structure and the surface passivation level.
In this webinar, Dr Di Kang presents results suggesting that, to achieve the highest passivation quality, an optimum amount of hydrogen surrounding the interfacial SiOx is needed, while insufficient or excess hydrogen can both lead to degradation of poly-Si passivation.
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About the presenter:
Postdoctoral research fellow at Australia National University, Dr Di Kang was awarded the best student presentation at IEEE PVSC and European PVSEC conferences in 2021, and 2020-2021 annual solar thesis prize. In her current research, she focuses on defects in industrial Si solar cells.
The recording of the January 26th, 2022 live session with Dr. Di Kang is followed by Q&As with Dr. Di Kang as well as with Dr. Rong Liu, Application Scientist at CAMECA.