Nanoscale insights for semiconductor innovation
CAMECA provides advanced analytical solutions for dopant characterization, combining
Atom Probe Tomography (APT) and
Secondary Ion Mass Spectrometry (SIMS) . Our latest Semiconductor Analytical Brief focuses on APT and demonstrates how the LEAP 6000 XR™ delivers repeatable, atomic-scale 3D analysis for semiconductor materials.
Why choose APT for dopant analysis?
APT offers sub-nanometer spatial resolution, enabling precise mapping of dopant distributions in three dimensions. This capability provides critical insights into clustering, diffusion, segregation, and contamination—challenges that are difficult to address with other techniques.
Repeatability and process control
The
LEAP 6000 XR™ ensures consistent results across platforms and excellent correlation with SIMS and NIST standards. Advanced automation features such as chain acquisition and scripted acquisition reduce operator time, enable unattended runs, and support large-scale data collection for process monitoring.
Complementary SIMS solutions
While this brief focuses on APT, CAMECA also offers SIMS instruments for ultra-shallow and deep implant profiling, providing unparalleled detection limits and high throughput for dopant depth analysis.
Download the Semiconductor Analytical Brief and discover how APT can transform your dopant analysis workflow.
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