High Impact Research: Composition metrology and correlative microscopy of wide bandgap semiconductors with APT
星期一, 二月 7, 2022
In the last decade, atom probe tomography (APT) has emerged as a valuable tool in the study of III-N semiconductors. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes (LEDs), laser diodes and microwires. In nano-electronics, it has allowed insights into doping and alloying effects in transistors. Coupled with other microscopy techniques (i.e., TEM, PL, CL) and theoretical modeling, the availability of three-dimensional compositional information of nitride heterostructures based on the APT data has had (and will continue to have) a profound impact on the design and development of devices.
View this short webinar with a Q&A session.
↓ Duration: 50 minutes