Skip to content
汉语
Search

HEXAR

HEXAR

用于真空环境表面处理的宽束 ECR 离子源

HEXAR 由多个采用六边形排列的微波腔组成，每个微波腔均以极低的射频功率运行 ECR 放电（在 2.45 GHz 条件下，每个腔体仅需数瓦功率）。

这一设计之所以能够取得成功，得益于 ECR 等离子体卓越的可靠性和稳定性，以及离子源无需消耗性部件的特点。

此外，该技术还能够实现对束流电流密度分布的精确控制，这是传统宽束离子源无法实现的。通过调节气体流量、离子光学系统和施加的射频功率，可以同时控制电流密度分布的形状和幅值。

HEXAR 采用可扩展设计理念，可根据不同尺寸表面的处理需求进行定制。其典型应用包括离子束刻蚀、表面清洗、离子辅助沉积（IAD）以及离子束溅射沉积（IBSD）。

  • 规格参数 +


    应用 刻蚀、修形、溅射、
    表面活化、表面改性、
    清洗及沉积
    离子源类型 无灯丝 ECR 离子源
    工作气体 H2、He、N2、O2、稀有气体及分子气体
    束流电流 最高 40 mA（@2 kV）
    束流电压 0.1 – 2 kV
    三栅加速/减速系统
    栅极处束斑尺寸 80 mm
    长度 110 mm
    直径 130 mm
    微波功率 7 × 20 W + 1 × 20 W（电子中和器）
    微波匹配网络 无需匹配
    冷却方式 油冷或去离子水冷
    安装接口 标准 CF160 法兰，可适配其他法兰规格
    电子控制单元 19 英寸 6U 机架：
    控制模块（含高频控制）及 8 个高频发生器
    冷却器（500 W）
    硬件控制 通过微控制器提供 API 接口
    通信协议 Ethernet UDP、RS232
    用户界面 GUI 图形界面软件（仅支持 Ethernet UDP）
    气体流量控制 质量流量控制器（MFC）
    插入深度 210 mm
    谐振腔数量 7 个（配备中和器时为 8 个）
    选配件 加长电缆、中和器

  • 产品应用 +

    • Ion beam sputter deposition system applying a focused ion beam to a target material, facilitating thin film coating on a substrate
      Ion beam sputter deposition

      Ion Beam Sputter Deposition (IBSD) is a physical vapor deposition (PVD) technique that consists in adding a thin film to the substrate surface to improve its material properties. Traditional challenges of IBSD such as high maintenance, high level of complexity, and difficulty to scale up are overcome thanks to CAMECA’s unique ECR technology.

      继续阅读

    • Ion implantation apparatus directing high-energy ions into a semiconductor wafer to modify its electrical properties.
      Ion beam figuring (IBF)

      Ion Beam Figuring consists in locally sputtering atoms in order to create a surface with a specified profile. It is a used for precise figuring and finishing of optical elements, such as spheres, aspheres and free forms on lenses and mirrors. CAMECA’s ECR technology and ion optics system offer the highest flexibility in beam size, shape, and energy.

      继续阅读

    • Ion implantation apparatus directing high-energy ions into a semiconductor wafer to modify its electrical properties.
      Ion implantation

      Ion implantation consists in adding ions to the interior of a substrate to change its elemental composition and improve material properties. It is commonly used for steel toughening, medical implants, and semiconductor device fabrication.

      继续阅读

    • Ion beam system performing etching and polishing processes on a material surface to achieve desired microstructures.
      Etching, cleaning, polishing & milling

      Sputter cleaning, ion polishing, milling and cutting are all based on Ion Beam Sputtering. They are used as a surface preparation step before depositing a thin film, before high resolution imaging or surface analysis as well as for nanostructuring a surface. CAMECA’s ECR technology delivers stable and reliable beams, eliminating the maintenance required with filament-based technologies.

      继续阅读

    • Ion assisted deposition setup enhancing thin film growth by bombarding the substrate with low-energy ions during deposition.
      Ion assisted deposition

      Ion Assisted Deposition consists in modifing the properties of a growing thin film by directing an ion beam at it. It can also be used to purposely introduce compressive stress in the film to improve its mechanical properties. The stability and reliability of CAMECA ECR technology is attractive for ion assistance applications.

      继续阅读

    • Advanced instrumentation used in nuclear and atomic physics research for analyzing atomic structures and reactions.
      Nuclear and atomic physics

      CAMECA high energy single cavity sources are used in various setups for nuclear and atomic physics, ranging from particle injection into electrostatic storage rings or charge boosters, to power testing of future neutron detectors.

      继续阅读

  • 文档下载 +

  • 科研文章 +


    以下是CAMECA ECR 离子/电子源用户发表的部分论文：

    Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications. A. S. Stodolna, T. W. Mechielsen, P. van der Walle, C. Meekes, H. Lensen. Published Online: 6 August 2024. 阅读全文

    Ion source developments to supply mono & multi charged ion beams to the new NHa C400 hadrontherapy system. L. Maunoury, P. Velten, X. Donzel, V. Engelen, G. Collignon, P. Sortais, J. Perrussel, P. Paliard and D. Bérard. Citation L. Maunoury et al 2024 J. Phys.: Conf. Ser. 2743 012090. 阅读全文

    Development of a high current electron beam facility for compact accelerator neutron source target thermal tests. J.F. Muraz, D. Santos, V. Ghetta, J. Giraud, O. Guillaudin, P. Sortais, T. Thuillier, J. Marpaud, M. Chala, M. Forlino, M. Hervé. Volume 1062, May 2024, 169214.  阅读全文

    Controlling the optical properties of hafnium dioxide thin films deposited with electron cyclotron resonance ion beam deposition. Chalisa Gier, Marwa Ben Yaala, Callum Wiseman, Sean MacFoy, Martin Chicoine, François Schiettekatte, James Hough, Sheila Rowan, Iain Martin, Peter MacKay, Stuart Reid, Volume 771, 30 April 2023, 139781. 阅读全文

    Processing and characterization of a multibeam sputtered nanocrystalline CoCrFeNi high-entropy alloy film. P. Nagy, N. Rohbeck, G. Roussely, P. Sortais, J.L. Lábárb, J. Gubicza, J. Michler, L. Pethö. Received 16 July 2019, Revised 31 January 2020, Accepted 11 February 2020, Available online 11 February 2020, Version of Record 29 February 2020. 阅读全文

    Amorphous Silicon with Extremely Low Absorption: Beating Thermal Noise in Gravitational Astronomy. I. A. Birney, J. Steinlechner, Z. Tornasi, S. MacFoy, D. Vine, A. S. Bell3, D. Gibson, J. Hough, S. Rowan et al. P. Sortais, S. Sproules, S. Tait, I. W. Martin, and S. Reid1. Phys. Rev. Lett. 121, 191101 – Published 6 November, 2018.
    阅读全文

    Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings.Classical and Quantum Gravity, 35, 075001. (doi:10.1088/1361-6382/aaad7c). Vajente, G., Birney, R., Ananyeva, A., Angelova, S., Asselin, R., Baloukas, B., Bassiri, R., Billingsley, G., Fejer, M.M., Gibson, D., Godbout, L.J., Gustafson, E., Heptonstall, A., Hough, J., MacFoy, S., Markosyan, A., Martin, I.W., Martinu, L., Murray, P.G., Penn, S., Roorda, S., Rowan, S., Schiettekatte, F., Shink, R., Torrie, C., Vine, D., Reid, S., and Adhikari, R.X.  08 February 2018. 阅读全文

  • 用户一览 +


    CAMECA 的 ECR 源客户遍布全球各大洲，其中超过 80% 来自半导体、分析仪器和医疗健康等工业领域。以下列举部分学术机构客户：
    • 长沙埃福思科技有限公司，中国长沙
    • 材料制备与结构研究中心（CEMES），法国图卢兹
    • 等离子体-表面相互作用化学实验室（ChIPS），蒙斯大学，比利时
    • 霍华德·休斯医学研究所（Howard Hughes Medical Institute），美国马里兰州
    • 劳厄-朗之万研究所（Institut Laue-Langevin），法国格勒诺布尔
    • 光与物质研究所（Institut Lumière Matière），法国里昂第一大学
    • 奥赛核物理研究所（Institut de Physique Nucléaire d’Orsay），法国
    • 奥赛分子科学研究所（Institut des Sciences Moléculaires d’Orsay），法国
    • 薄膜、传感器与成像研究所（Institute of Thin Films, Sensors and Imaging），英国西苏格兰大学
    • 亚原子物理与宇宙学实验室（CNRS/IN2P3），法国格勒诺布尔
    • 劳伦斯利弗莫尔国家实验室，美国加利福尼亚州
    • 马克斯·普朗克研究所（海德堡），德国
    • 荷兰应用科学研究组织（TNO），荷兰代尔夫特
    • 斯特拉斯克莱德大学，英国格拉斯哥
    • 塔塔基础研究所，印度海得拉巴
    • 埃因霍温理工大学材料力学多尺度实验室，荷兰
    • 米兰比可卡大学，意大利